发明名称 |
MULTI-GATE DEVICE WITH HIGH K DIELECTRIC FOR CHANNEL TOP SURFACE |
摘要 |
A multi-gate device has a high-k dielectric layer for a top channel of the gate and a protective layer for use in a finFET device. The high-k dielectric layer is placed on the top surface of the channel of the finFET and may reduce or eliminate silicon consumption in the channel. The use of the high-k dielectric layer on the top surface reduces hysteresis and mobility degradation associated with high-k dielectrics. The protection layer may protect the high-k dielectric layer during an etching process.
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申请公布号 |
US2008070366(A1) |
申请公布日期 |
2008.03.20 |
申请号 |
US20070928787 |
申请日期 |
2007.10.30 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
DORIS BRUCE B.;GLUSCHENKOV OLEG;ZHANG YING;ZHU HUILONG |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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