发明名称 COMPOSITION FOR FORMING FINE RESIST PATTERN AND PATTERN FORMING METHOD USING SAME
摘要 [Object] To provide a composition enabling to form a fine negative photoresist pattern free from troubles, such as, surface roughness, bridge defects, and resolution failure; and also to provide a pattern formation method using that composition.;[Means to solve the problem] A fine pattern-forming composition is used for miniaturizing a resist pattern by fattening said pattern in a process of formation of a negative resist pattern using a chemically amplified resist composition. The fine pattern-forming composition comprises a polymer comprising a repeating unit having a structure of the following formula (A), (B) or (C):;;and a solvent. This composition is cast on a negative resist pattern obtained by development with an organic solvent developer, and then heated to form a fine pattern.
申请公布号 US2016327867(A1) 申请公布日期 2016.11.10
申请号 US201615216288 申请日期 2016.07.21
申请人 Merk Patent GmbH 发明人 OKAYASU Tetsuo;SEKITO Takashi;ISHII Masahiro
分类号 G03F7/40 主分类号 G03F7/40
代理机构 代理人
主权项 1. A fine pattern-forming composition used for miniaturizing a resist pattern by fattening said pattern in a process of formation of a negative resist pattern using a chemically amplified resist composition, consisting of a polymer, an inorganic acid, a solvent and an optional surfactant, and further where the polymer is P1:
地址 Darmstadt DE