发明名称 |
COMPOSITION FOR FORMING FINE RESIST PATTERN AND PATTERN FORMING METHOD USING SAME |
摘要 |
[Object] To provide a composition enabling to form a fine negative photoresist pattern free from troubles, such as, surface roughness, bridge defects, and resolution failure; and also to provide a pattern formation method using that composition.;[Means to solve the problem] A fine pattern-forming composition is used for miniaturizing a resist pattern by fattening said pattern in a process of formation of a negative resist pattern using a chemically amplified resist composition. The fine pattern-forming composition comprises a polymer comprising a repeating unit having a structure of the following formula (A), (B) or (C):;;and a solvent. This composition is cast on a negative resist pattern obtained by development with an organic solvent developer, and then heated to form a fine pattern. |
申请公布号 |
US2016327867(A1) |
申请公布日期 |
2016.11.10 |
申请号 |
US201615216288 |
申请日期 |
2016.07.21 |
申请人 |
Merk Patent GmbH |
发明人 |
OKAYASU Tetsuo;SEKITO Takashi;ISHII Masahiro |
分类号 |
G03F7/40 |
主分类号 |
G03F7/40 |
代理机构 |
|
代理人 |
|
主权项 |
1. A fine pattern-forming composition used for miniaturizing a resist pattern by fattening said pattern in a process of formation of a negative resist pattern using a chemically amplified resist composition, consisting of a polymer, an inorganic acid, a solvent and an optional surfactant, and further where the polymer is P1: |
地址 |
Darmstadt DE |