| 发明名称 |
METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL |
| 摘要 |
Provided is a method for manufacturing a silicon carbide single crystal capable of easily separating a silicon carbide single crystal from a pedestal. The method includes the step of fixing a seed substrate to a pedestal with a stress buffer layer being interposed therebetween, the step of growing a silicon carbide single crystal on the seed substrate, the step of separating the silicon carbide single crystal from the pedestal at the stress buffer layer, and the step of removing a residue of the stress buffer layer adhering to the silicon carbide single crystal subjected to the step of separating. |
| 申请公布号 |
US2016340796(A1) |
申请公布日期 |
2016.11.24 |
| 申请号 |
US201415111013 |
申请日期 |
2014.11.21 |
| 申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
HORI Tsutomu;UETA Shunsaku;MATSUSHIMA Akira |
| 分类号 |
C30B23/02;C30B33/02;C30B29/36 |
主分类号 |
C30B23/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for manufacturing a silicon carbide single crystal, comprising the steps of:
fixing a seed substrate to a pedestal with a stress buffer layer being interposed therebetween; growing a silicon carbide single crystal on the seed substrate; separating the silicon carbide single crystal from the pedestal at the stress buffer layer; and removing a residue of the stress buffer layer adhering to the silicon carbide single crystal subjected to the step of separating. |
| 地址 |
Osaka-shi JP |
