| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method for a semiconductor device that gives consideration to a moisture absorption amount of a low dielectric constant film and a desorption amount of an absorbent material so that uniform processing may be done while reducing a difference from pattern to pattern in low dielectric constant film. SOLUTION: At first, compute an initial numerical apertureα<SB>0</SB>of a mask (step S51). Then, compute a relation of a desorption amount X and a moisture absorbent time of an absorbent material from a low dielectric constant film (step S52). After that, based on the relation of the desorption amount X and the moisture absorbent time of the absorbent material, find a relation of the desorption amount F(α) (=X) and the numerical aperture. Next, from the relation of the desorption amount F(α) (=X) and the numerical aperture, compute an allowable numerical apertureα<SB>1</SB>where the desorption amount becomes smaller than an allowable value (step S53). Then, compare the initial numerical apertureα<SB>0</SB>and the allowable numerical apertureα<SB>1</SB>(step S54). At this time, if the initial numerical apertureα<SB>0</SB>is smaller than the allowable numerical apertureα<SB>1</SB>, add a dummy pattern to the mask pattern (step S56). COPYRIGHT: (C)2009,JPO&INPIT
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