| 摘要 |
PROBLEM TO BE SOLVED: To provide a metal film production device where a metal film can be produced without depending on the material of a substrate in a new system CVD (chemical vapor deposition) device. SOLUTION: The metal film production device is equipped with: a chamber 1 to be stored with a metal oxide-containing substrate 33; the member 34 to be etched made of a carbon material provided at the chamber 1; a nozzle 14 feeding a halogen-containing gaseous starting material 21 to the inside of the chamber 1; the substrate 33 as an oxygen component means; a plasma generating means where the inside of the chamber 1 is made into plasma to generate gaseous starting material plasma, and the member 34 to be etched is etched with the gas plasma 20, thus a precursor 36 of the carbon component and the gaseous starting material 21 is produced; and a control means where the temperature on the side of the substrate is made lower than that of the member 34 to be etched, thus the carbon component in the precursor 36 containing an oxygen component in the oxygen component means is film-formed on the side of the substrate. By producing an oxygen component-containing carbon film, even a metal film hard to be coupled with a metal oxide being a passive state to the substrate 33 can be produced. COPYRIGHT: (C)2007,JPO&INPIT
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