P-TYPE ACTIVATING METHOD OF GROUP III NITRIDE COMPOUND SEMICONDUCTOR

摘要

PROBLEM TO BE SOLVED: To improve carrier concentration of a p-type semiconductor layer much more than a conventional case and to promote p-type activation of the p-type semiconductor layer.

SOLUTION: In a light emitting diode 100, an upper face (contact face 103a) of the p-type semiconductor layer 103 is immersed in electrolyte 2. A counterelectrode 3 is formed from carbon or platinum and is connected to a negative electrode 104 through a constant voltage power supply E with wirings 4 and 5. Chemical reaction of 2H++2OH-→2H2O is promoted near the contact face 103a, and chemical reaction of 2H2O+2e-→2OH-+H2is promoted with such structure near the counterelectrode 3. Thus, multiple protons (H+) can be made to secede from the p-type semiconductor layer 103.

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