INTERLAYER INSULATION FILM, MANUFACTURING METHOD THEREOF, AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To improve the reliability of a semiconductor device when using an insulation film made of a borazine-based compound for the semiconductor device including multilayer interconnection. SOLUTION: The manufacturing method of an interlayer insulation film includes: a process for film formation by a chemical vapor deposition (CVD) method with an interlayer insulation film that contains a borazine skeleton and allows surface nitrogen atom concentration to be higher than internal nitrogen atom concentration, and a borazine compound as raw materials; and a process for operating gas containing a nitrogen gas to the surface of the film. The semiconductor device has the interlayer insulation film. COPYRIGHT: (C)2008,JPO&INPIT