ORGANOMETALLIC PRECURSORS FOR USE IN CHEMICAL PHASE DEPOSITION PROCESSES

摘要

An organometallic precursor is provided. The precursor corresponds in structure to Formula (I): Cp(R)nM(CO)2(X), wherein: M is Ru, Fe or Os; R is C1-C10-alkyl; X is C1-C10-alkyl; and n is 1, 2, 3, 4 or 5. The precursors are useful in chemical phase deposition processes, such as atomic layer deposition (ALD) and chemical vapor deposition (CVD).