| 摘要 |
A piezo-resistance element and its manufacturing method are provided to reduce a variation of a resistance value by burying a resistance layer in a surface of a substrate. A groove(114) is formed in a semiconductor substrate, and a resistance layer(120) having a conductive type opposing to the semiconductor substrate formed in the groove, the resistance layer. A silicon layer having a conductive type corresponding to the semiconductor substrate is formed on the resistance layer. The silicon layer is of a polycrystal layer, and the resistance layer is a buried impurity-diffusion layer which is formed by an ion implantation process of boron. |
