FORMING MULTI-STACK NANOWIRES USING A COMMON RELEASE MATERIAL

摘要

A method for forming a multi-stack nanowire device includes forming a common release layer on a substrate, the common release layer comprising a common release material. The method also includes forming a first multi-layer stack on a first portion of the common release layer, the first multi-layer stack comprising at least two layers separated by at least one layer comprising the common release material, and forming a second multi-layer stack on a second portion of the common release layer, the second multi-layer stack comprising at least two layers separated by at least one layer comprising the common release material. The method further includes patterning each of the first multi-layer stack and the second multi-layer stack into one or more fins and forming two or more multi-stack nanowires from the one or more fins by removing the common release material using a common etch process.

主权项

1. A method comprising:
forming a common release layer on a substrate, the common release layer comprising a common release material; forming a first multi-layer stack on a first portion of the common release layer, the first multi-layer stack comprising at least two layers separated by at least one layer comprising the common release material; forming a second multi-layer stack on a second portion of the common release layer, the second multi-layer stack comprising at least two layers separated by at least one layer comprising the common release material; patterning each of the first multi-layer stack and the second multi-layer stack into one or more fins; and forming two or more multi-stack nanowires from the one or more fins by removing the common release material using a common etch process; wherein the first multi-layer stack comprises:
a first layer comprising a first material;a second layer formed over the first layer, the second layer comprising the common release material; anda third layer formed over the second laver, the third layer comprising the first material; wherein the second multi-layer stack comprises:
a fourth layer comprising a second material;a fifth layer formed over the fourth laver, the fourth layer comprising the common release material; anda sixth layer formed over the fifth layer, the sixth layer comprising the second material; and wherein the first material is different than the second material.