发明名称 |
DENSIFYING SURFACE OF POROUS DIELECTRIC LAYER USING GAS CLUSTER ION BEAM |
摘要 |
A method of fabricating and a structure of an integrated circuit (IC) incorporating a porous dielectric layer are disclosed. A metal line is formed in the porous dielectric layer. A gas cluster ion beam process is applied to the porous dielectric layer so that an upper portion of the dielectric layer is densified to be not porous or non-interconnected low porous, while a lower portion of the porous dielectric layer still maintains its ultra-low dielectric constant after the gas cluster ion beam process.
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申请公布号 |
US2008090402(A1) |
申请公布日期 |
2008.04.17 |
申请号 |
US20060536893 |
申请日期 |
2006.09.29 |
申请人 |
BONILLA GRISELDA;CHEN SHYNG-TSONG;FITZSIMMONS JOHN A;MEHTA SANJAY;PONOTH SHOM |
发明人 |
BONILLA GRISELDA;CHEN SHYNG-TSONG;FITZSIMMONS JOHN A.;MEHTA SANJAY;PONOTH SHOM |
分类号 |
H01L21/44 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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