| 摘要 |
Disclosed is a method for forming a bump in a semiconductor chip packaging process. The method for forming a bump forms a photoresist layer on a substrate and uses a mask to remove the photoresist layer to form a bump formation space, and plates a first metal layer of a nickel material and a second metal layer of a gold material in the bump formation space. And then the photoresist layer is removed to form a bump made of the first metal layer and the second metal layer and plate an outer surface of the bump with a third metal layer of a gold material. The bump is made of two metal layers of nickel and gold and secures high conductivity and adhesion by the metal layer coated on the outer surface with gold. Therefore, bump manufacturing costs are reduced and performance of the bump can be equally maintained. |
