Photoelectric conversion device and method for producing photoelectric conversion device

摘要

A photoelectric conversion device according to the present invention has a plurality of photoreceiving portions provided in a substrate, an interlayer film overlying the photoreceiving portion, a large refractive index region which is provided so as to correspond to the photoreceiving portion and has a higher refractive index than the interlayer film, and a layer which is provided in between the photoreceiving portion and the large refractive index region, and has a lower etching rate than the interlayer film, wherein the layer of the lower etching rate is formed so as to cover at least the whole surface of the photoreceiving portion. In addition, the layer of the lower etching rate has a refractive index in between the refractive indices of the large refractive index region and the substrate. Such a configuration can provide the photoelectric conversion device which inhibits the lowering of the sensitivity and the variation of the sensitivity among picture elements.

主权项

1. A method of manufacturing a photoelectric conversion device comprising:
forming a layer that covers a photoreceiving portion and a gate electrode of a first transistor by etching a film from which a side wall on a gate electrode of a second transistor is formed; forming a first insulation film that covers the layer; forming a first wiring on the first insulation film; forming a second insulation film that covers the first insulation film and the first wiring; forming a second wiring on the second insulation film; forming an opening above the photoreceiving portion by etching a portion of the first and second insulation films, after forming the second wiring; and filling the opening with a material so that the layer is positioned between the material and the photoreceiving portion, wherein the opening is formed so that (1) a distance between the material and the photoreceiving portion is smaller than a thickness of the gate electrode of said first transistor, (2) a portion of the layer is removed after forming the second wiring and before filing the opening, and (3) a portion of the layer remains between a bottom of the opening and the photoreceiving portion.