发明名称 ROOM TEMPERATURE JOINING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a room temperature joining method enabling the firm joining between members to be joined by polymerization at a room temperature using an extremely low pressure without heating, pressurization, application of voltage, or the like, and to provide a film in the method. SOLUTION: Under a high vacuum atmosphere such as ultimate pressure of 10<SP>-4</SP>Pa or lower, films having a microcrystal structure of metals or various compounds are formed by a vacuum film forming method such as sputtering or ion plating, preferably under the plasma generation, on respective joining surfaces of wafer, chip, substrate, package, or other various members to be joined. During film formation, or after the film formation, while maintaining a vacuum condition, the respective films formed on the joining surfaces of the members to be joined are polymerized, or when not forming the film on one joining surface, the other joining surface formed with a film subjected to wash activation and an activated joining surface subjected to activation are polymerized. As a result, joining between the joining surfaces can be performed between the members to be joined. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008207221(A) 申请公布日期 2008.09.11
申请号 JP20070047360 申请日期 2007.02.27
申请人 SHIMAZU TAKEHITO;MUSASHINO ENG:KK 发明人 SHIMAZU TAKEHITO;MIYAMOTO KAZUO
分类号 B23K20/00;B23K20/24;C03C27/06;C23C14/34;H01L21/02;H01L23/02;H01L25/065;H01L25/07;H01L25/18 主分类号 B23K20/00
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