| 摘要 |
A method and a system for measurement of the geometrical parameters of ultra thin wafers with the thickness less than 200 microns. The measurement system comprises two measurement channels (102, 104) and a computer. Each measurement channel (102, 104) comprises a motor-positionable probe further comprising a back pressure probe (114) and a capacitive probe (134). The capacitive probe (134) is substantially co-centric with the back pressure probe (114). The air back pressure sensor (122) is used to calibrate the capacitive sensor for a given dielectric permittivity of the conductive target, and the capacitive sensor (124) is used to measure thickness, flatness, bow, and warpage of the ultra-thin conductive target.
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