METHOD OF FORMING FINE PATTERN OF SEMICONDUCTOR DEVICE

摘要

A fine pattern forming method of the semiconductor device is provided to reduce the line width of pattern and improve the resolution by forming the spacer on the side wall of pattern. A first amorphous carbon film(112) and an oxide film(114) are successively formed on the semiconductor substrate(110). A second amorphous carbon film pattern is formed on the oxide film. A primary nitride film spacer(130) is formed on the side wall of the second amorphous carbon film pattern. The oxide film pattern is formed by using the primary nitride film spacer as the etching mask. The trimming etching process is performed to the first amorphous carbon film. The first amorphous carbon film pattern(112a) is formed by the trimming etching process.