| 发明名称 |
LOW TEMPERATURE FABRICATION OF LATERAL THIN FILM VARISTOR |
| 摘要 |
A structure and method for fabricating a laterally configured thin film varistor surge protection device using low temperature sputtering techniques which do not damage IC device components contiguous to the varistor being fabricated. The lateral thin film varistor may consist of a continuous layer of alternating regions of a first metal oxide layer and a second metal oxide layer formed between two laterally spaced electrodes using a low temperature sputtering process followed by a low temperature annealing process. |
| 申请公布号 |
US2016254144(A1) |
申请公布日期 |
2016.09.01 |
| 申请号 |
US201514885512 |
申请日期 |
2015.10.16 |
| 申请人 |
International Business Machines Corporation |
发明人 |
Gambino Jeffrey P.;Graf Richard S.;Mandal Sudeep |
| 分类号 |
H01L21/02;H01L49/02 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of forming a lateral thin film varistor comprising:
forming a continuous layer comprising alternating regions of a first metal oxide layer and a second metal oxide layer between two laterally spaced electrodes using a low temperature sputtering process followed by a low temperature annealing process. |
| 地址 |
Armonk NY US |
