| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method by which a solder junction rate is increased and crack is made less likely to occur in the junction part, by use of Zn-Al based solder, and to provide a semiconductor device.SOLUTION: A manufacturing method for a semiconductor device 10 comprises: a first step in which a first solder material layer 21, composed of Zn-Al based solder, is disposed on a first principal surface of a first metal body 22, and a second solder material layer 23, composed of Zn-Al based solder, is disposed on a second principal surface opposite the first principal surface to form a temporary laminated body; a second step in which pressure and vibration or the like are applied to the temporary laminate body, and while an oxide film present in an area disposed in contact with the first principal surface of the first solder material layer and the second principal surface of the second solder material layer is broken, the first metal body, the first solder material layer and the second solder material layer are joined; and a third step in which the first metal body and a semiconductor element 13 are soldered using the first solder material layer, and the first metal body and the second metal body 31 are soldered using the second solder material layer, and temperature is increased to the point equal to or higher than the fusion point of the Zn-Al based solder but lower than the fusion point of Zn.SELECTED DRAWING: Figure 1 |
