| 摘要 |
<p>PURPOSE: A method for manufacturing a flash memory device is provided to deposit a tunnel oxide layer uniform by differentiating the concentration of barrier nitride layer in the edge region of the element isolation layer and the active region. CONSTITUTION: An element isolation layer(160) is formed in a semiconductor substrate in order to define an active region. A corner region is formed in the edge of the element isolation layer adjacent to the active region, and lower than the surface of the active area and has an inclined surface. A first barrier layer(210) is doped in the surface of the active region. A second barrier layer(220) is doped in the surface of the corner region. A tunnel oxide layer(250) is formed on the semiconductor substrate including the first and the second barrier layer into uniform thickness.</p> |
