| 摘要 |
Disclosed herein is a magnetostatic wave device that employs a single-crystal thin film of the formula Y3-xMxFe5-yNYO12 (where M denotes at least one member selected from La, Bi, Lu, and Gd, N denotes at least one member selected from Al, In, and Sc, and x and y are defined as 0<x</=1.0 and 0<y</=1.5, respectively) which is formed by liquid phase epitaxy on a single-crystal substrate of Gd3Ga5O12, characterized in that said single-crystal thin film has a lattice constant larger than that of said single-crystal substrate, with the difference ( INCREMENT a) between the two lattice constants being in the range defined by 0.0004 nm</= INCREMENT a</=0.001 nm. It has good characteristic properties (e.g., low insertion loss and ripple).
|
