| 摘要 |
A nonvolatile memory device features a serial diode cell by effectively arranging a cross point cell array including a nonvolatile ferroelectric capacitor and a serial PN diode chain to reduce the whole memory size. A serial diode cell array including a nonvolatile ferroelectric capacitor and a serial diode switch which does not require an additional gate control signal is positioned on a circuit device region including a word line driving unit, a sense amplifier, a data bus, a main amplifier, a data buffer and an input/output port. An interlayer insulating film separates a cell array region and the circuit device region, thereby reducing the whole chip size.
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