发明名称 |
THIN FILM TRANSISTOR AND METHOD OF MAKING THE SAME |
摘要 |
A thin film transistor is characterized by having an island-in structure having a semiconductor layer with a channel region, a bottom heavily-doped semiconductor layer, and a top heavily-doped semiconductor layer. The bottom heavily-doped semiconductor layer is positioned on two opposite sides of the surface of the semiconductor layer beyond the channel region. The top heavily-doped semiconductor layer, positioned on the bottom heavily-doped semiconductor layer, covers two opposite side walls of the bottom heavily-doped semiconductor layer and the semiconductor layer so that current leakage from the drain electrode to the source electrode is prevented.
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申请公布号 |
US2006124930(A1) |
申请公布日期 |
2006.06.15 |
申请号 |
US20050908077 |
申请日期 |
2005.04.27 |
申请人 |
CHEN CHI-WEN;CHANG TING-CHANG;LIU PO-TSUN;GAN FENG-YUAN |
发明人 |
CHEN CHI-WEN;CHANG TING-CHANG;LIU PO-TSUN;GAN FENG-YUAN |
分类号 |
H01L31/0376;H01L21/336;H01L29/04;H01L29/786 |
主分类号 |
H01L31/0376 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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