| 摘要 |
A rectifying device and method of fabrication thereof is disclosed. The method comprises the steps of plating a metal (e.g., aluminum) layer on top and bottom surfaces of silicon wafer in a vacuum, cutting silicon wafer into a plurality of identical silicon dies, coupling a molybdenum layer on either top or bottom surface of silicon die by brazing metal film therebetween, performing an etching on silicon die after silicon die and molybdenum layers are formed together, filling a uniform glass paste onto the peripheral surface of silicon die between the molybdenum layers, and sintering the glass paste to form a glass layer on the peripheral surface of silicon die. This ensures that the rectifying device can operate normally when mounted on a high power high input current circuit. Also, a conductive metal (e.g., nickel or gold) layer is coated on the portion of either molybdenum layer which is not in contact with silicon die. Further, a conductive lead coupled to a circuit is welded to either conductive metal layer. |
