发明名称 LAYER TRANSFERRING PROCESS
摘要 A process for transferring a useful layer to a receiver substrate includes providing a donor substrate comprising an intermediate layer, a carrier substrate, and a useful layer. The intermediate layer is free of species liable to degas during a subsequent heat treatment, and is configured to become soft at a temperature. The receiver substrate and the donor substrate are assembled. An additional layer is provided between the receiver substrate and the carrier substrate that comprises chemical species that are susceptible to diffuse into the intermediate layer during the subsequent heat treatment so as to form a weak zone. The heat treatment is carried out on the receiver substrate and the donor substrate at a second temperature higher than the first temperature.
申请公布号 US2016163535(A1) 申请公布日期 2016.06.09
申请号 US201514957133 申请日期 2015.12.02
申请人 Soitec 发明人 Renauld Vivien;Lecomte Monique
分类号 H01L21/02 主分类号 H01L21/02
代理机构 代理人
主权项 1. A method for transferring a useful layer to a receiver substrate, the process comprising: providing a donor substrate comprising an intermediate layer located between a carrier substrate and a useful layer, the intermediate layer configured to be plastically deformed when heated to a temperature at or above a first temperature, wherein the intermediate layer does not include chemical species susceptible to degassing during a heat treatment carried out at or above the first temperature; providing a receiver substrate; assembling the receiver substrate and the donor substrate such that the useful layer and the intermediate layer are disposed between the carrier substrate and the receiver substrate; providing an additional layer disposed between the carrier substrate and the receiver substrate; the additional layer comprising chemical species susceptible to diffusion out from the additional layer and into the intermediate layer during the heat treatment carried out at or above the first temperature so as to form a weak zone in the intermediate layer; carrying out the heat treatment on the receiver substrate and the donor substrate after assembling the receiver substrate and the donor substrate, the heat treatment being carried out at a second temperature above the first temperature.
地址 Bernin FR