| 摘要 |
PROBLEM TO BE SOLVED: To achieve high integration of a semiconductor device to increase storage capacity per unit area.SOLUTION: A semiconductor device comprises a first transistor provided on a semiconductor substrate and a second transistor provided on the first transistor. And a semiconductor layer of the second transistor contacts wiring on the upper side of the semiconductor layer and contacts a gate electrode on the lower side. With this composition, the wiring and the gate electrode of the first transistor can function as a source electrode and a drain electrode. Accordingly, an occupied area of the semiconductor device can be reduced.SELECTED DRAWING: Figure 1 |
