| 发明名称 |
METHOD TO MAKE BURIED, HIGHLY CONDUCTIVE P-TYPE III-NITRIDE LAYERS |
| 摘要 |
A conductive, porous gallium-nitride layer can be formed as an active layer in a multilayer structure adjacent to one or more p-type III-nitride layers, which may be buried in a multilayer stack of an integrated device. During an annealing process, dopant-bound atomic species in the p-type layers that might otherwise neutralize the dopants may dissociate and out-diffuse from the device through the porous layer. The release and removal of the neutralizing species may reduce layer resistance and improve device performance. |
| 申请公布号 |
US2016197151(A1) |
申请公布日期 |
2016.07.07 |
| 申请号 |
US201514954195 |
申请日期 |
2015.11.30 |
| 申请人 |
Yale University |
发明人 |
Han Jung;Li Yufeng;Zhang Cheng;Park Sung Hyun |
| 分类号 |
H01L29/20;H01L33/32;H01L31/0304;H01L21/308;H01L29/207;H01L21/02;H01L21/324;H01L21/306;H01L29/78;H01L29/861 |
主分类号 |
H01L29/20 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An integrated device comprising:
a substrate; a first n-type layer formed from III-nitride material; a first p-type layer formed from III-nitride material; and a first conductive, porous layer formed from III-nitride material and located adjacent to the first p-type layer, wherein a portion of the first conductive, porous layer is exposed to an ambient. |
| 地址 |
New Haven CT US |
