CHEMICAL VAPOR DEPOSITION METHOD USING PLASMA CHEMICAL VAPOR DEPOSITION DEVICE

摘要

PURPOSE: A chemical vapor deposition method using plasma chemical vapor deposition device is provided to reduce the thickness difference between various films formed on plural semiconductor substrates. CONSTITUTION: The present invention discloses a chemical vapor deposition method using plasma chemical vapor deposition device comprising: an input step sequentially inputting plural semiconductor substrates within a plasma chemical vapor deposition device; a step performing CVD process using plasma reaction gas on the respective semiconductor substrate according to the sequence; an output step sequentially outputting the respective semiconductor substrate which the CVD process is performed in toward outside of the plasma CVD device; a cleaning step cleaning the inside of the plasma CVD device by using plasma etching gas; the first purge step firstly purging the inside of the plasma CVD device by using purge gas; a pumping step pumping the gas within the CVD device toward outside; and the secondary purge step purging the inside of the plasma CVD device by using purge gas.