| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of fabricating a semiconductor device using a self alignment floating gate step. SOLUTION: The method of fabricating the semiconductor device includes the steps of: forming a trench by etching a semiconductor substrate using a nitride layer pattern as a mask, forming an insulation layer over an entire face of the semiconductor substrate, forming a device isolation pattern by polishing the insulation layer so as to expose the nitride layer pattern, removing the nitride layer pattern, forming a first polysilicon layer over an entire face of the semiconductor substrate, etching the first polysilicon layer so as to expose the device isolation pattern and thus forming a floating gate electrode between the device isolation patterns, forming an insulation layer covering the floating gate electrode, forming a second polysilicon layer over the insulation layer; and patterning the second polysilicon layer and the insulation layer and thus forming a control gate electrode and an insulation layer pattern. COPYRIGHT: (C)2009,JPO&INPIT
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