DISPLACEMENT LIQUID FOR SEMICONDUCTOR CIRCUIT PATTERN DRYING, AND DRYING METHOD

摘要

Problem: An object of the present invention is to provide a replacement solution for drying a semiconductor pattern and a method for drying a semiconductor pattern, that can prevent breakdown of an intricate semiconductor pattern with a high aspect ratio, when drying after a washing process after edging is completed in a semiconductor manufacturing process. Resolution Means: The present invention provides a replacement solution for drying a semiconductor pattern and method, containing a hydrofluoro ether and/or hydrofluorocarbon, that is completely miscible with isopropyl alcohol, has a boiling point of 70C or higher, and has surface tension under atmospheric conditions of 10 mN/m or lower when heated to a temperature below the boiling point.