| 发明名称 | Planarization method, method for polishing wafer, and CMP system | ||
| 摘要 | A planarization method is provided. The planarization method includes providing a wafer, in which the wafer includes a work function layer, a surface layer formed on the work function layer and oxidized from the work function layer, and a planarization layer disposed on or above the surface layer, performing a chemical-mechanical planarization (CMP) process on the planarization layer, providing an incident light to a surface of the wafer under the CMP process, detecting absorption of the incident light by the surface layer; and stopping the CMP process in response to an increase in the detected absorption of the incident light. | ||
| 申请公布号 | US9425109(B2) | 申请公布日期 | 2016.08.23 |
| 申请号 | US201414292162 | 申请日期 | 2014.05.30 |
| 申请人 | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. | 发明人 | Cheng Chung-Liang;Chen Yen-Yu;Lee Chang-Sheng;Zhang Wei |
| 分类号 | H01L21/66;H01L21/306;H01L21/67;H01L21/3105;B24B37/013;B24B49/12 | 主分类号 | H01L21/66 |
| 代理机构 | McDermott Will & Emery LLP | 代理人 | McDermott Will & Emery LLP |
| 主权项 | 1. A planarization method comprising: providing a wafer, wherein the wafer comprises a work function layer, a surface layer formed on the work function layer and oxidized from the work function layer, and a planarization layer disposed on or above the surface layer; performing a chemical-mechanical planarization (CMP) process on the planarization layer; providing an incident light to a surface of the wafer under the CMP process; detecting absorption of the incident light by the surface layer; and stopping the CMP process in response to an increase in the detected absorption of the incident light. | ||
| 地址 | Hsinchu TW | ||