| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device which can prevent noises of a substrate from transmitting to an internal circuit, while enhancing a protection capability for an overvoltage with a high electrostatic discharge damage breakdown strength. SOLUTION: Since a second n well 7 connected to a power line is not buried in the bottom face of the second p well 3 of an element constituting a power protection circuit, even when a negative surge enters into an I/O line or Vss line on the basis of the power line, an overcurrent does not concentrate on the collector of a parasitic npn transistor Tr1 formed between the drain region 32 of the NMOS transistor of a protection element and the second n well 7, thereby preventing the breakdown of the protection element and vastly enhancing the electrostatic discharge damage breakdown strength of the internal circuit. COPYRIGHT: (C)2006,JPO&NCIPI
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