| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor substrate with which a nitride-based semiconductor device can be manufactured inexpensively. SOLUTION: In the method of manufacturing the semiconductor substrate, hydrogen ions are implanted into a nitride-based semiconductor crystal 10 provided on a first substrate 20 to form a hydrogen ion implanted layer 13 in a low dislocation density region 12. The semiconductor crystal 10 and a second substrate 30 are laminated to each other, and shock is applied from the outside in this state to separate the density region 12 of the semiconductor crystal 10 along the implanted layer 13, and an uppermost surface layer 12b of the density region 12 is transferred (peeled) onto the second substrate 30. In this case, a lower layer portion 12a of the density region 12 is not transferred onto the second substrate 30, but remains on the first substrate 20. The second substrate 30 onto which the uppermost layer portion 12b of the density region 12 is transferred is used as a semiconductor substrate to be acquired by this method, and the first substrate 20 in which the lower layer 12a of the density region 12 remains is re-utilized as a substrate as epitaxial growth. COPYRIGHT: (C)2007,JPO&INPIT
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