| 摘要 |
In this method, in order to detect internal defects with high accuracy and without causing the overlapping of adjacent TSV transmission images when inspecting, using an X-ray transmission image, internal defects in a TSV formed in a semiconductor wafer, defects inside a TSV formed on a sample are detected by irradiating the sample with X-rays emitted from an X-ray source, detecting the X-rays, and processing an X-ray transmission image. Therein, the detection, using an X-ray detector, of X-rays transmitted through the sample is configured such that: the detection azimuth of the X-rays, which are transmitted through the sample and detected by the X-ray detector, relative to the sample, and the detection elevation angle of the X-rays relative to the X-ray source are determined on the basis of information on the arrangement interval, depth, and planar shape of structures formed in the sample; the angle of rotation of a rotating stage on which the sample is mounted is adjusted in accordance with the detection azimuth which has been determined; and the X-rays that have been transmitted through the sample are detected with the position of the detector set to the detection elevation angle which has been determined. |
