发明名称 On-chip program voltage generator for antifuse repair
摘要 A voltage generator is provided in a DRAM to generate the appropriate voltage for programming antifuses. In one embodiment of the present invention, a high voltage charge pump is provided on a DRAM product to generate the high voltage necessary for programming antifuses. In one embodiment, the high voltage charge pump includes a plurality of transistors in series to produce a programming voltage that is some multiple of the supply voltage to the memory less.
申请公布号 US5986916(A) 申请公布日期 1999.11.16
申请号 US19970915341 申请日期 1997.08.20
申请人 MICRON TECHNOLOGY, INC. 发明人 MERRITT, TODD A.;DUESMAN, KEVIN
分类号 G11C11/401;G11C5/14;G11C11/4074;G11C17/16;G11C29/04;(IPC1-7):G11C13/00 主分类号 G11C11/401
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