发明名称 |
On-chip program voltage generator for antifuse repair |
摘要 |
A voltage generator is provided in a DRAM to generate the appropriate voltage for programming antifuses. In one embodiment of the present invention, a high voltage charge pump is provided on a DRAM product to generate the high voltage necessary for programming antifuses. In one embodiment, the high voltage charge pump includes a plurality of transistors in series to produce a programming voltage that is some multiple of the supply voltage to the memory less.
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申请公布号 |
US5986916(A) |
申请公布日期 |
1999.11.16 |
申请号 |
US19970915341 |
申请日期 |
1997.08.20 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
MERRITT, TODD A.;DUESMAN, KEVIN |
分类号 |
G11C11/401;G11C5/14;G11C11/4074;G11C17/16;G11C29/04;(IPC1-7):G11C13/00 |
主分类号 |
G11C11/401 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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