| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor rectifying device which is capable of being prevented from deteriorating its breakdown voltage by restraining a leakage current when a reverse bias voltage is applied while restraining an on-state resistance from increasing when a forward vias voltage is applied. SOLUTION: A Schottky electrode 50 is located between adjacent field alleviating layers 40. The electrode includes a first region 50B that is formed coming into contact with the surface of a drift layer 30, and a second region 50A which is the area of the Schottky electrode 50 excluding the first region 50B. The first region 50B is formed of conductive material whose barrier height is higher than that of the second region 50A. COPYRIGHT: (C)2008,JPO&INPIT |
