Semiconductor structure with deep trench thermal conduction

摘要

Diodes and resistors for integrated circuits are provided. Deep trenches (DTs) are integrated into the diodes and resistors for the purposes of thermal conduction. The deep trenches facilitate conduction of heat from a semiconductor-on-insulator substrate to a bulk substrate. Semiconductor fins may be formed to align with the deep trenches.

主权项

1. A method of forming a semiconductor structure, comprising:
depositing an insulator layer on a bulk semiconductor substrate; depositing a semiconductor-on-insulator layer on the insulator layer; forming a plurality of deep trenches in the semiconductor structure; and forming a gate ring on the semiconductor structure, the gate ring delineating a central region and a perimeter region; doping the central region with a first dopant type, doping the perimeter region with a second dopant type; andforming a plurality of semiconductor fins on the semiconductor-on-insulator layer prior to forming a plurality of deep trenches in the semiconductor structure.