| 发明名称 |
Magnetic Tunnel Junctions |
| 摘要 |
A magnetic tunnel junction has a conductive first magnetic electrode comprising magnetic recording material. A conductive second magnetic electrode is spaced from the first electrode and comprises magnetic reference material. A non-magnetic tunnel insulator material is between the first and second electrodes. The magnetic recording material of the first electrode comprises a first magnetic region, a second magnetic region spaced from the first magnetic region, and a third magnetic region spaced from the first and second magnetic regions. A first non-magnetic insulator metal oxide-comprising region is between the first and second magnetic regions. A second non-magnetic insulator metal oxide-comprising region is between the second and third magnetic regions. Other embodiments are disclosed. |
| 申请公布号 |
US2016329486(A1) |
申请公布日期 |
2016.11.10 |
| 申请号 |
US201514706182 |
申请日期 |
2015.05.07 |
| 申请人 |
Micron Technology, Inc. |
发明人 |
Harms Jonathan D.;Chen Wei;Murthy Sunil S.;Kula Witold |
| 分类号 |
H01L43/02 |
主分类号 |
H01L43/02 |
| 代理机构 |
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代理人 |
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| 主权项 |
1. A magnetic tunnel junction comprising:
a conductive first magnetic electrode comprising magnetic recording material; a conductive second magnetic electrode spaced from the first electrode and comprising magnetic reference material; a non-magnetic tunnel insulator material between the first and second electrodes; and the magnetic recording material of the first electrode comprising a first magnetic region, a second magnetic region spaced from the first magnetic region, and a third magnetic region spaced from the first and second magnetic regions; a first non-magnetic insulator metal oxide-comprising region between the first and second magnetic regions; and a second non-magnetic insulator metal oxide-comprising region between the second and third magnetic regions. |
| 地址 |
Boise ID US |
