| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor photodetection element capable of suppressing time resolution from being different among pixels and also improving the time resolution more.SOLUTION: A semiconductor photodetection element 10 includes: a plurality of avalanche photodiodes APD operating in a Geiger mode and formed in a semiconductor substrate 1N; a plurality of quenching resistances R1 connected in series to the corresponding avalanche photodiodes APD and arranged on the side of a main surface 1Na of the semiconductor substrate 1N; a through electrode TE electrically connected to the plurality of quenching resistances R1 and also formed penetrating the semiconductor substrate 1N; and a bump electrode electrically connected to the through electrode TE and arranged on the reverse surface side of the main surface 1Na of the semiconductor substrate 1N. Wiring distances from the respective avalanche photodiodes APD to the bump electrode via the quenching resistance R1 and the through electrode TE are equal.SELECTED DRAWING: Figure 14 |
