发明名称 |
Optical integrated semiconductor light emitting device |
摘要 |
An optical integrated semiconductor light emitting device with improved light emitting efficiency is provided by preventing leak current from flowing through a high defect region of the substrate. The optical integrated semiconductor light emitting device includes: a substrate, in which in a low defect region made of crystal having a first average dislocation density, one or more high defect regions having a second average dislocation density higher than the first average dislocation density are included; and a Group III-V nitride semiconductor layer which is formed on the substrate, has a plurality of light emitting device structures, and has a groove in the region including the region corresponding to the high defect region (high defect region).
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申请公布号 |
US2006192209(A1) |
申请公布日期 |
2006.08.31 |
申请号 |
US20060344468 |
申请日期 |
2006.01.31 |
申请人 |
MAEDA OSAMU;FUJIMOTO TSUYOSHI;TAKEYA MOTONOBU;HASHIDU TOSHIHIRO;SHIOZAKI MASAKI;OOFUJI YOSHIO |
发明人 |
MAEDA OSAMU;FUJIMOTO TSUYOSHI;TAKEYA MOTONOBU;HASHIDU TOSHIHIRO;SHIOZAKI MASAKI;OOFUJI YOSHIO |
分类号 |
H01L21/00;B82Y20/00;H01S5/02;H01S5/22;H01S5/323;H01S5/343 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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