SILICON-CARBIDE TRENCH GATE MOSFETS

摘要

In a general aspect, an apparatus can include a semiconductor substrate, a drift region disposed in the semiconductor substrate; a body region disposed in the drift region and a source region disposed in the body region. The apparatus can also include a gate trench disposed in the semiconductor substrate. The apparatus can further include a gate dielectric disposed on a sidewall and a bottom surface of the gate trench, the gate dielectric on the sidewall defining a first interface with the body region and the gate dielectric on the bottom surface defining a second interface with the body region. The apparatus can still further include a gate electrode disposed on the gate dielectric and a lateral channel region disposed in the body region, the lateral channel region being defined along the second interface.

主权项

1. An apparatus comprising:
a semiconductor substrate of a first conductivity type; a drift region of the first conductivity type disposed in the semiconductor substrate; a body region of a second conductivity type disposed in the drift region; a source region of the first conductivity type disposed in the body region; a gate trench disposed in the semiconductor substrate, the gate trench having a depth that is greater than a depth of the source region and less than a depth of the body region; a gate dielectric disposed on a sidewall of the gate trench and a bottom surface of the gate trench, the gate dielectric on the sidewall of the gate trench defining a first interface with the body region, the gate dielectric on the bottom surface of the gate trench defining a second interface with the body region; a gate electrode disposed on the gate dielectric; and a lateral channel region of the first conductivity type disposed in the body region, the lateral channel region being defined along the second interface.