| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon substrate having a new texture formation surface, by forming a texture by dry etching, on the surface of a silicon substrate of substrate surface azimuth (111).SOLUTION: A silicon substrate of substrate surface azimuth (111) has a texture formation surface where a texture is formed. A plurality of six-sided pyramid-shaped recesses are formed in the texture formation surface, and the depth of the recesses is in the range from 100 nm to 10 μm. The manufacturing method of the silicon substrate includes a step for preparing the silicon substrate of the substrate surface azimuth (111), a step for blowing etching gas to the silicon substrate surface, and a step for cleaning with hydrofluoric-nitric acid water. The etching gas contains one or more kinds of gas selected from a group consisting of ClF3, XeF2, BrF3, BrF5 and NF3. |
