MANUFACTURING METHOD OF THIN FILM TRANSISTOR SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of a thin film transistor substrate which can secure the desired TFT performance.SOLUTION: A manufacturing method of a thin film transistor substrate 100 having a thin film transistor includes: a metal layer formation process for forming a gate electrode 120 with Cu as a main component on the upper side of a substrate 110; a first insulation layer formation process for forming a first SiN layer 131 at the deposition temperature equal to or lower than 360°C on the surface of the gate electrode 120; a second insulation layer formation process for forming a second SiN layer 132 at the deposition temperature higher than 360°C on the first SiN layer 131; and a channel layer formation process for forming an oxide semiconductor layer 140 being a channel layer of the thin film transistor on the upper side of the substrate 110.SELECTED DRAWING: Figure 6