发明名称 Layout for NAND flash memory array having reduced word line impedance
摘要 A memory array including a first region in which a first memory sub-array is located and a second region separated from the first region in which a second memory sub-array is located. The first and second memory sub-arrays have flash memory cells coupled to a plurality of word lines. A driver region separates the first and second regions and includes word line driver circuits coupled to the word lines of the first and second memory sub-arrays. A row decoder region adjacent the first region and separate from the driver region includes at least some sub-circuits of row decoder circuits located therein. The row decoder circuits are coupled to the word line driver circuits located in the driver region and are configured to activate driver circuits to drive word lines of the first and second memory sub-arrays in response to decoding address signals selecting the particular row decoder circuit.
申请公布号 US2006221691(A1) 申请公布日期 2006.10.05
申请号 US20050097064 申请日期 2005.04.01
申请人 MICRON TECHNOLOGY, INC. 发明人 HA CHANG W.;ABEDIFARD EBRAHIM
分类号 G11C16/04 主分类号 G11C16/04
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