INTER METAL DIELECTRIC FILM OF SEMICONDUCTOR DEVICE AND ITS FABRICATION METHOD

摘要

PURPOSE: An inter metal dielectric film of semiconductor device its fabrication method are provided to remove a crack raised at O3-Tetra Ethyl Ortho Silicate(TEOS) by using chemical vapor deposition method. CONSTITUTION: The method for forming inter metal dielectric films includes the steps; coating a Plasma Tetra Ethyl Ortho Silicate film(120) on a first metal film(110), coating O3-Tetra Ethyl Ortho Silicate film on the Plasma Tetra Ethyl Ortho Silicate film by using chemical vapor deposition method, forming Silicate On Glass film on a void formed with the O3-Tetra Ethyl Ortho Silicate film, exposing a desired surface between the O3-Tetra Ethyl Ortho Silicate film and the Silicate On Glass film by performing etch-back process, and forming Plasma Enhanced Oxide film on the exposed surface of O3-Tetra Ethyl Ortho Silicate film and the Silicate On Glass film. Thereby, it is possible to remove a crack raised at O3-Tetra Ethyl Ortho Silicate by using chemical vapor deposition method.