发明名称 REACTIVE SPUTTERING METHOD, AND LAMINATE FILM MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a reactive sputtering method or the like, by which a particle deposit having deposited in a non-erosion region or a nodule having occurred in an erosion region hardly leaves a sputtering target, and which can suppress an arc discharge or the like.SOLUTION: A reactive sputtering method, in which a sputtering apparatus including magnetron sputtering cathodes 17, 18, 19 and 20 in a vacuum chamber 10, is used to introduce a process gas containing a reactive gas into a vacuum chamber thereby to perform a filming operation, is characterized in that the reactive gas is composed of an oxygen gas or a nitrogen gas, and in that the reactive gas contains water. By the action of a water content contained in the reactive gas, a particle deposit or a nodule becomes hard to leave a sputtering target, and the charged particle deposit and the nodule become hard to leave, and the electric charges of the charged particle deposit or the nodule reduce to suppress an arc discharge or the like.SELECTED DRAWING: Figure 1
申请公布号 JP2016211064(A) 申请公布日期 2016.12.15
申请号 JP20150098054 申请日期 2015.05.13
申请人 SUMITOMO METAL MINING CO LTD 发明人 WATANABE HIROTO
分类号 C23C14/34;C23C14/06;H01B13/00 主分类号 C23C14/34
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