发明名称 NEGATIVELY CHARGED SUBSTRATE POLISHING METHOD AND MANUFACTURING METHOD OF NEGATIVELY CHARGED SUBSTRATE WITH HIGH SURFACE SMOOTHNESS
摘要 A polishing method is provided which yields a negatively charged substrate with excellent surface smoothness with good productivity while achieving high polishing speeds. Also provided is a method for achieving a negatively charged substrate with high surface smoothness. In this method of manufacturing a negatively charged substrate using a polishing slurry, the polishing slurry contains an oxide represented by compositional expression ABO3 (A represents at least one element selected from the group consisting of Sr and Ca. B represents at least one element selected from the group consisting of Ti, Zr and Hf.) and zirconium oxide, and the polishing method involves carrying out, at least once each, a polishing step a for polishing a negatively charged substrate under conditions in which the zeta potential of the polishing slurry becomes positive, and a polishing step b for polishing the negatively charged substrate under conditions in which the zeta potential of the polishing slurry becomes negative.
申请公布号 WO2016136447(A1) 申请公布日期 2016.09.01
申请号 WO2016JP53699 申请日期 2016.02.08
申请人 SAKAI CHEMICAL INDUSTRY CO., LTD. 发明人 KOIZUMI, Hisao;KAWASAKI, Yuji;TAKAHASHI, Naoto;HASHIMOTO, Hiroki;KATO, Ryoichi;YAMAMOTO, Tsutomu;MIKAMI, Masaru;WADA, Mizuho
分类号 B24B37/04;B24B37/00;C03C19/00;C09G1/02;C09K3/14;H01L21/304 主分类号 B24B37/04
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