TRIPLE LAYER ANTI-REFLECTIVE HARD MASK

摘要

A method includes forming a layer ( 120) of silicon oxynitride (SiON), silicon rich nitride (SiRN) or silicon nitride (Si<SUB>3</SUB>N<SUB>4</SUB>) over a layer ( 115) of semiconducting material. The method further includes forming a first layer (125) of anti-reflective material over the layer ( 120) of SiON, SiRN or Si<SUB>3</SUB>N<SUB>4</SUB> and forming a second layer (130) of anti-reflective material over the first layer ( 125). The method also includes using the first layer (125), second layer ( 130) and layer (120) of SiON, SiRN or Si<SUB>3</SUB>N<SUB>4</SUB> as a mask when etching a pattern in the layer (115) of semiconducting material .