| 发明名称 | Sensor structure with pinned stabilization layer | ||
| 摘要 | A reader sensor that has a sensor stack with an AFM layer, a pinned stabilization layer, and a pinned layer, with the pinned stabilization layer closer to the AFM layer than to the pinned layer. The stack also includes a non-magnetic spacer layer between and in contact with the pinned stabilization layer and with the pinned layer. A magnetic coupling between the pinned stabilization layer and the pinned layer is no more than 50% of a magnetic coupling between the pinned stabilization layer and the AFM layer. | ||
| 申请公布号 | US9171559(B1) | 申请公布日期 | 2015.10.27 |
| 申请号 | US201414486607 | 申请日期 | 2014.09.15 |
| 申请人 | SEAGATE TECHNOLOGY LLC | 发明人 | Nikolaev Konstantin;Pokhil Taras;Stankiewicz Andrzej;Patwari Mohammed;Singleton Eric |
| 分类号 | G11B5/39;B82Y25/00;B82Y10/00 | 主分类号 | G11B5/39 |
| 代理机构 | HolzerIPLaw, PC | 代理人 | HolzerIPLaw, PC |
| 主权项 | 1. A reader sensor stack comprising: an AFM layer; a pinned stabilization layer having a thickness no greater than 1.5 nm and magnetically coupled to the AFM layer; a pinned layer, with the pinned stabilization layer closer to the AFM layer than the pinned layer; a non-magnetic spacer layer between and in contact with the pinned stabilization layer and with the pinned layer; and a reference layer antiferromagnetically coupled to the pinned layer, wherein a magnetic coupling between the pinned stabilization layer and the pinned layer is no more than 50% of the magnetic coupling between the pinned stabilization layer and the AFM layer. | ||
| 地址 | Cupertino CA US | ||