发明名称 WAFER PROCESSING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a wafer processing method arranged so that a wafer can be divided along scheduled division lines by plasma etching without using a single-purpose processing facility so as to avoid adversely affecting an environment.SOLUTION: A wafer processing method comprises the steps of: supplying a water-soluble resist to a surface of a wafer to cover it with a resist film 400; selectively exposing, in the resist film, regions corresponding to scheduled division lines, which is to be etched, and regions corresponding to devices, which is not to be etched, to light; developing the resist film with water 70, thereby exposing the scheduled division lines 21 of the wafer; etching the wafer by plasma, thereby dividing the wafer into the individual devices; and removing the resist film by jetting water against the resist film with a high-pressure air.SELECTED DRAWING: Figure 6
申请公布号 JP2016105442(A) 申请公布日期 2016.06.09
申请号 JP20140243306 申请日期 2014.12.01
申请人 DISCO ABRASIVE SYST LTD 发明人 MATSUZAKI SAKAE
分类号 H01L21/301;G03F7/40;G03F7/42;H01L21/3065 主分类号 H01L21/301
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