| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a light absorbing layer of a CIS-based thin film solar cell that can attain high Voc while maintaining high FF by suppressing a leak, by using a selenization/sulfurization process, and attain high conversion efficiency as a result. <P>SOLUTION: After an object to be treated which contains one of Cu/Ca, Cu/In and Cu-Ga/In is heated and held at temperature T<SB>1</SB>for a timeΔt<SB>1</SB>in a state where a selenium source is introduced to form a selenide of the object, a sulfur source is introduced to change the atmosphere into a sulfur atmosphere and the object is heated and held at temperature T<SB>2</SB>for a timeΔt<SB>2</SB>, and further the temperature is lowered to temperature T3 to heat and hold the object at the temperature for a timeΔt<SB>3</SB>. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
